Mostrando entradas con la etiqueta II 2010-1 CAF Edgar Alberto Servita. Mostrar todas las entradas
Mostrando entradas con la etiqueta II 2010-1 CAF Edgar Alberto Servita. Mostrar todas las entradas

domingo, 27 de junio de 2010

IMS2010 Tech Recap: What You (May Have) Missed

IMS2010 Tech Recap: What You (May Have) Missed

June 8, 2010
IMS2010 Tech Recap: What You (May Have) Missed
By Christine Brearey and Jim Pomager, RF Globalnet
With attendance up 7% over last year, the 2010 IEEE MTT-S International Microwave Symposium (IMS2010) exhibition, which took place May 25 to 27 in Anaheim, CA, certainly felt busier. Over 9,500 designers, researchers, students, and executives from the microwave and RF industry packed the exhibit floor to see the latest components and systems, demo new software and instrumentation, meet with potential solution providers, and much more.
If you didn't attend IMS2010, attended but didn't get to all the booths you wanted to, or just want to relive your complete Microwave Week experience, we encourage you to read on. We'll explore the cutting-edge technologies, major news, and emerging trends seen and heard on the IMS2010 exhibition floor.
For even more information on IMS2010 — including video coverage, articles, news, products, and more — please visit our IMS2010 Resource Center.



Advanced Control Components
Advanced Control Components distributed its new PIN diode switch products catalog to booth visitors. The switches in this catalog range in frequency from 10 MHz to 18 GHz, with over 2700 variations to choose from. They are available in single-pole, single-throw up to single-throw, six-throw versions. And, best of all, every switch in the catalog can be delivered in 30 days or less.





Agilent Technologies
As usual, Agilent Technologies had a lot going on at its IMS booth. Among the many test and measurement products on display were: the N9000A CXA signal analyzer, the PXA signal analyzer, the N5106A PXB baseband generator and channel emulator, the V3500A handheld RF power meter (see video demo), the N9923A FieldFox RF vector network analyzer, and the new PNA-X Series of microwave network analyzers (see video demo). On the software side, Agilent EEsof EDA focused on software platforms for SystemVue 2010.01 and Genesys 2010.05 (see video demo). However, the big news for EEsof was the release of EMPro 2010, the company's 3D electromagnetic (EM) modeling and simulation software for analyzing IC packages, connectors, antennas, and other RF components. To see a video demo of EMPro in action at Agilent's booth, click here.

Analog Devices
Over the past month, Analog Devices (ADI) released several new products, and these were the company's focus during the show. The new single-channel ADL5353 and dual-channel ADL5354 integrated passive mixers were created for a variety of wireless applications, such as cellular base station receivers, transmit observation receivers, and radio link downconverters (see related story). Likewise, the new ADF500x RF prescaler circuits — featuring a fixed divide ratio of 2, 4, or 8 — were designed for a number of applications, including point-to-point radios, VSATs, and microwave communication systems (see related story). ADI also released the ADF4150HV 4.4 GHz fractional-N or integer-N PLL synthesizer (see related story) and version 3.3 of ADIsimPLL, ADI's PLL circuit design and evaluation tool (see related story).




Anaren
Anaren spotlighted its Xinger-II components for base station applications, including WiMAX; its ultra-miniature baluns, filter baluns, and related products for wireless consumer electronics and broadcast applications, including balun transformers suitable for analog-to-digital converters; a wide range of resistive components (terminations, attenuators, and resistors) for wireless, military, instrumentation, and select medical devices; and complex solutions for space and defense primes.



Anatech Electronics
Anatech's founder and president, Sam Benzacar, introduced us to his new AB730B949 728 to 733 MHz cavity bandpass filter designed specifically for base stations, repeaters, and LTE applications where higher performance and higher power handling are required. This new filter features an extremely sharp cutoff/breakwall transition, which is required by the FCC for LTE operation, with 40 dB attenuation 700 KHz from the band edges.




Anritsu Company
To help engineers conduct more accurate tests on subsystems, especially those in local oscillator substitution and clock generation applications, Anritsu developed its new MG3690C series of RF/microwave signal generators. These instruments, introduced at IMS2010 (see related presentation), are suitable for testing microwave components, subsystems, and systems during design and manufacturing, as well as for signal simulation to test and verify radar and communications systems. According to the company, the MG3690C series is the only synthesizer family that generates signals from 0.1 Hz to 70 GHz. Anritsu conducted a demo of the new signal generator for RF Globalnet at the show — click here to see the video



Ansoft
Dr. Lawrence Williams, director of product management, explained how Ansoft's renewed focus on customer engineering challenges yielded several breakthroughs in the latest release of HFSS, which the company had on display at IMS2010. For example, the new HFSS-IE (Integral Equation) option introduces a method of moments (MoM) solver to HFSS, joining the existing finite element method (FEM) solver. The addition of MoM makes HFSS more effective at handling large-scale radiating and scattering simulation problems.
Attendees could also test-drive Ansoft Designer 6, which ships a few weeks after the show. Among other features, this new release will allow users to now run HSCPICE directly from within Designer. 



Antenna Research Associates
Antenna Research Associates (ARA) featured its recently developed 18" Manpack antenna at the show. The small, lightweight antenna is made of a seven-piece segmented composite panel and is designed to allow transmit and receive applications in the X, Ku, and Ka bands. The antenna can be set up quickly, is transportable in a single case, and is available in either a fixed or tripod mount. 


AR
RF Globalnet's Bill Winner presented AR's Don Shepherd and Joseph Diesso with a plaque commemorating the inclusion of the AR "Orange Book of Knowledge" in RF Globalnet's Top 10 of 2009. Shepherd is one of AR's three founders and serves as the company's chairman. Diesso was recently appointed AR's marketing manager and brings with him over 30 years of experience in the marketing and sales of RF/Microwave devices, components, and assemblies.


Avago Technologies
Steve Saw, product marketing manager for Avago's Wireless Semiconductor Division, told us that the company's film bulk acoustic resonator (FBAR) technology generated the most interest among booth visitors, particularly for non-handset applications. The company conducted live demos of its new Wi-Fi/WiMAX coexistence RF front-end solution for mobile applications (datacards and modems, in addition to handsets), which contains multiple FBAR filters. In addition, Avago introduced two new ultra-low noise (0.37 to 0.59 dB) amplifiers for cellular and LTE base station applications, along with a new five-chip SMT front end for the expanding 38 GHz and 42 GHz cellular radio infrastructure and backhaul point-to-point radio markets.
 



AWR
AWR unveiled the latest versions of its Microwave Office high-frequency design software, AXIEM 3D planar EM analysis software, and Visual System Simulator (VSS) communication system design and optimization software. One of the most significant updates to AXIEM expands its antenna capabilities, making it particularly useful for large, planar antenna designs. In addition, AWR allowed RF Globalnet to video demonstrations of Microwave Office, highlighting its new features, and iFilter technology, which was developed for synthesis of lumped-element and distributed filters. Also, with the graduation season upon us — and many students in attendance — AWR promoted its Graduate Gift Initiative program, which provides qualified 2010 graduates with a free, fully functional license of Microwave Office and Visual System Simulator (VSS).



Ciao Wireless
The latest development for Ciao Wireless was its new line of high-linearity, low-noise amplifiers. This series of amplifiers combines ultra-high linearity performance with noise figures as low as 1.8 dB and very flat gain. Each part is integrated in a compact, sealed housing. These amplifiers are intended for use in radar, phased array, WLAN/Wi-Fi, and ECM/EW applications.



Corry Micronics
Corry Micronics focused on the release of its dual-controlled remote broadband switch, the DCR-8. The DCR-8 is an eight port switch remotely controllable via USB or Ethernet. The switch automatically recognizes either type of control connection and is bi-directional, offering the user flexibility to install the switch as a single input and eight outputs or as eight inputs with a single output. Corry discussed the DCR-8 with RF Globalnet during the show (view the video), along with the company's other RF switches.


CST
Computer Simulation Technology (CST) showed off its newly enhanced CST Microwave Studio (MWS) asymptotic solver in demonstrations at its booth. The upgraded solver, currently available in CST MWS 2010, can now use farfields as excitation sources, enabling the calculation of an installed antenna's farfield, even for electrically very large structures (e.g. ships). And for scattering simulations, many excitation sources can now be run in parallel, which is useful in many radar applications.

CST also previewed new capabilities for CST MWS 2011 — including sensitivity analysis for the transient solver and curved elements and domain decomposition for the frequency domain solver — which is scheduled for release in January.  


Custom MMIC Design Services
Custom MMIC Design Services (CMDS) highlighted its new family of high-efficiency mHEMT low-noise amplifiers. At 30 mW power dissipation, the CMD142 and CMD145 deliver noise performance of 0.9 dB at 10 GHz and 1.4 dB at 20 GHz. According to the company, these LNAs offer a significant RF performance improvement and major reduction in power dissipation over any other devices currently offered on the market. CMDS also presented the CMD146 DC to 60 GHz distributed amplifier with 10 dB of flat gain and 20 dB input return loss.


Dow-Key Microwave
RF Globalnet had the pleasure of speaking with Doug Staudmeister, Dow-Key's new GM, about the company's current and future plans. Dow-Key has launched an initiative to reinvest in its engineering group and to refresh its product line of switching solutions to meet customer demands, particularly for repeatability and reliability. This trend is reflected in Dow-Key's new product catalog, which was distributed at its booth. (You can download it here.) In addition, Staudmeister added that while Dow-Key will continue to remain focused on the military market, it has also begun to explore opportunities in the commercial sector, especially those that demand high reliability.

e2v
Tony Challis, e2v's product manager for traveling wave tubes (TWTs) and subsystems, introduced us to two new mini helix TWTs at the show. The first, the N20181 (launched in March), provides a minimum of 100 W of output power over the 4.5 to 18 GHz frequency band. The second spans 2.5 to 18 GHz — which previously required multiple tubes to cover — with 100 W typical performance (reduced performance down to 2.5 GHz); it's expected to be commercially available by October. Also, e2v's microwave division displayed numerous products at the show that demonstrate its continuing transition from a components supplier to a system provider.

Empower RF Systems
Building on a theme of "think inside the box" at its booth, Empower RF Systems provided briefings and demonstrations of value-added, multifunction modules and systems integrating key RF and control functions into single power amplifier solutions. Empower showcased an array of solid-state PAs covering frequencies up to 6 GHz, including the BBM3Q5KHM, suitable for broadband mobile jamming and band-specific high power linear applications in the P/L/S frequency bands. Additional news from Empower RF Systems included an announcement of the opening of a second regional design center to compliment the company's technical team and support its growing business.

EM Software & Systems
The big story for EMSS at IMS2010 was the upcoming release of FEKO 6.0, the company's EM analysis software suite. This newest version of FEKO, due in September, will boast GPU (graphical processing unit) acceleration capability to speed run-time intensive solution phases by more than one order of magnitude, among other new features. EMSS also discussed its recent announcement that FEKO is now available on the SGI Cyclone cloud computing system, for large-scale parallel processing on a pay-per-use basis. In addition the company distributed evaluation copies of FEKO (you can request your copy here) and information on Antenna Magus 2.0, its database of antenna topologies.

Greenray Industries
Greenray Industries featured the new YH1300 series of OCXOs at its IMS booth. The YH1300 was designed to deliver consistent, reliable frequency control performance in high-shock and -vibration environments and features a compact 20.32 x 12.70 x 9.40 mm hermetic, DIP package. Greenray also showcased the T1215 series of TCXOs, which are available in a wide range of frequencies, from 750 kHz to 800 MHz, and a choice of CMOS, LVPECL, or LVDS outputs.

Integra Technologies
Integra provided visitors with a first look at two new transistors based on the company's recently developed high-voltage GaN-on-silicon technology. Both new components — the IGN2731M25 and IGN2731M50 — cover 2.7 to 3.1 GHz in the S-band frequency range. Under 300 µs pulse width and 10% duty cycle pulsing conditions, the IGN2735M25 typically supplies a minimum of 25 watts of peak output power, while the IGN2731M50 typically supplies a minimum of 50 watts. The kit shown here includes a circuit with the transistor in place, a space device in ESD-sensitive packing, and a memory stick with tested data, datasheet, and product brochure. 

JFW Industries A designer and manufacturer of RF solutions including attenuators, terminations, switches, power dividers, matrix switches, and specialized test systems, JFW Industries premiered its latest product catalog at the show. The company also featured the recently introduced the 75S-243, a 75-ohm electromechanical coaxial switch that operates in the DC to 1,000 MHz range.


J micro Technology
J micro, a supplier of electrical and mechanical test products for advanced semiconductor, medical, and packaged devices, featured the LMS-3009 laboratory microprobing station at its IMS booth. This RF and DC probe station is based on the company's popular LMS-2709 station, but features a larger, nickel-plated steel work surface. It is intended for research of advanced active and passive components and for university training in microwave microprobing. According to J micro's president, Jerry Schappacher, this new station provides sub-miniature measurement capabilities at a fraction of the cost of competing units, putting it into the individual contributor's budget range. 



KVG Quartz Crystal Technology
KVG showcased two new oscillator product lines at the show. Suitable for measurement equipment and test systems requiring low phase noise and tight frequency stability, the series 6000 OCXOs provide high performance in a small package, with dimensions of only 25 mm x 22 mm x 15 mm (see related story). Also featured were KVG's new 100 MHz OCXOs (see related story). Using self-manufactured, noise-optimized 3rd and 5th overtone SC-cut crystals and noise-minimized electronic circuits, these RF OCXOs provide very low phase noise, extending the range of applications for these kind of small packages.


Lansdale Semiconductor
Lansdale manufactures over 3,000 classic design ICs in the original package, exactly as they were created and produced by Freescale Semiconductor, Motorola, National, Philips (formerly Signetics), and Raytheon. Recently, Lansdale announced the availability of the encoder/decoder pairs and digital-to-analog converters originally designed and built by Freescale (see related story). These general-purpose building block integrated circuits include the MC145026, MC145027, and MC145028 encoder/decoder pairs along with MC144110 and MC14111 digital to analog converters.


M/A-COM Technology Solutions / Mimix Broadband
The CEOs of both companies were on hand to discuss the recently announced merger of the companies. During a press briefing at the M/A-COM Tech, Rick Montgomery of Mimix (who will remain with the combined organization in a "strategic role") explained that the two companies were a natural fit, due to their highly complementary product and customer portfolios. M/A-COM Tech's Joe Thomas (who will serve as CEO after the merger) expressed his excitement over the power amplifier and millimeter wave capabilities that Mimix brings to the equation. As for future plans, Thomas said that M/A-COM Tech is currently exploring opportunities in, among other things, GaN technology.



Maury Microwave
The Maury booth was quite busy as the company presented live demonstrations of numerous products. Among them was a mixed signal active load pull system that uses advanced A/D and D/A converters to create, analyze, and vary the impedance seen by a transistor or amplifier (see video demo). Another demonstration combined Maury's mechanical impedance tuners with Agilent's PNA-X with Nonlinear VNA (NVNA) to extract high-power X-parameter models over a wide impedance range (see video demo). Maury also introduced a new load pull software and methodology with its IVCAD platform, powered by AMCAD Engineering (see video demo).



Microsemi
Mike Mallinger of Microsemi's Wide Band Gap Products Group introduced us to the 0405SC-2200M, a brand new silicon carbide (SiC) static induction transistor (SIT) that can deliver 2200 W of RF peak power from 406 to 450 MHz. This 120 V, common-gate, Class AB transistor is intended for high-power amplifiers in applications such as UHF weather radar and long-range tracking radar. The company's RF Integrated Solutions Group also showcased an 18 To 40 GHz SDLVA (successive detection log video amplifier) in a ruggedized housing, for early warning radar receivers, threat detection equipment, electronic counter-measures, and missile guidance systems.

Microwave Technology
Microwave Technology (MwT) featured a number of recently announced new products, including linear gallium nitride (GaN) amplifiers, packaged monolithic microwave integrated circuit (MMIC) amplifiers, low-noise gallium arsenide (GaAs) field-effect transistors (FETs), and low-noise wideband amplifiers. In addition, MwT also premiered its 2010-2011 Product Selection Guide, comprising the company's complete RF and microwave product offerings.


Narda Microwave-East Over 30 years ago, Narda Microwave-East began manufacturing its first IMAs — classic microwave integrated circuits (MICs) designed for electronic warfare (EW) receivers. Over the past several years, Narda has improved these products by replacing classical MICs with new approaches using Integrated Microwave Assembly (IMA) technology, its focus at IMS2010 (see video demo). These new IMAs combine microwave hybrid manufacturing with multilayered printed circuit boards incorporating digital devices to produce levels of performance in footprints the company says are unrivaled by conventional techniques.


OEWaves
OEWaves featured a live demo of its new 10 GHz ultra-low phase noise compact opto-eclectronic oscillator (C-OEO). Available with a variety of scalable features and options, the C-OEO can be applied to enhance the performance of radar systems, instrumentation, phase noise measurement, test equipment, satellite communications, imaging, and microwave communications. OEWaves also provided demos of its miniature optical micro-resonator-based 34 GHz OEO prototype and microwave-photonic homodyne low phase noise measurement system.

Remcom
Remcom successfully launched a new release of XFdtd at the show (see related story). The new version features XACT Accurate Cell Technology, the XTend Script Library, and a multiphysics toolset. Remcom's booth also featured custom-configured GPU hardware that uses NVIDIA's new Fermi Tesla cards, optimizing the company's XStream GPU acceleration beyond previous results. 



RFHIC
With a focus on "green" technology, RFHIC showcased its high-efficiency GaN pallet amplifier at the show. This amplifier, when combined with digital pre-distortion (DPD), produces over 40% efficiency at a frequency band of 2100 to 2180 MHz, 45 dB gain, and 10 W at LTE/WCDMA four-channel at 28 V. It has been developed based on internally matched GaN on SiC device and Doherty technology.



RF Micro Devices
RFMD offered two in-booth demonstrations during the show. Its GaN demo featured the RFG1M09180, a high-power, high-efficiency GaN Doherty amplifier for 3G/4G cellular base stations (see video). This device achieves 180 W peak power at 50 V operation while maintaining over 70% peak efficiency, covering a frequency range of 700 to 1000 MHz. RFMD's smart energy/AMI demonstration featured the RF6525/EM357 reference design, developed in collaboration with Ember Corporation (see video demo). RFMD's RF6525 front end module supports multiple applications, including smart energy/advanced metering infrastructure (AMI), home area network (HAN), wireless ZigBee home automation, portable battery-powered equipment, and general 2.4 GHz ISM band systems (see related story).


Rohde & Schwarz
The big news for Rohde & Schwarz was the introduction of the new R&S ZVA67, the first 67 GHz VNA with four integrated ports, four internal and independent sources, and eight receivers (see related story). This instrument incorporates all of the features of the company's ZVA Series VNA family and applies them to millimeter-wave measurements. R&S also provided a number of in-booth demonstrations, including an RF capture, playback, and analysis solution for complex RF signal environments that utilizes the R&S FSV spectrum analyzer and R&S SMBV signal generator families coupled with IQ capture, storage, and software from X-COM Systems.

Scintera Networks Scintera demonstrated its single-chip power amplifier linearization solution, the SC1887. This RFin/RFout system-on-chip (SoC) for power amplifier linearization enables users to both increase the efficiency of their power amplifiers by up to four times, while at the same time reducing the cost of implementation. The SC1887 is now in full mass production and is being delivered in volume. Scintera also showcased its first application of its gigahertz signal processor. Scintera's Gigahertz Signal Processing (GSP) enables complex analog signal processing at high frequencies and broad bandwidths and eliminates the need for power consuming A/D conversion and digital signal processing. 

Skyworks
New for Skyworks at IMS2010 were two mid- and high-power Wi-Fi PAs and two ultra low noise amplifiers (LNAs) for cellular infrastructure. Irene Song, director of product marketing, explained that the SKY65152-11 and SKY65165-11 PAs were designed to address a specific trend in the WLAN space: the proliferation of new access point, router, and gateway configurations spawned by 802.11n. And skyrocketing demand for cellular bandwidth and higher data rates — or the "mobile internet tsunami," as VP of Analog Components David Stasey put it — led Skyworks to develop the SKY67100-396LF and SKY67101-396LF, a pair of new LNAs for boosting receive sensitivity in GSM CDMA, W-CDMA, and LTE base stations and repeaters.  

Sonnet Software
Sonnet provided free, hands-on, 20-minute training classes that were open to anyone on the exhibition floor (see video). Class topics focused on application areas for Sonnet users of all levels, and class attendees received a complimentary Sonnet Lite Plus license. Sonnet's EM software provides high-frequency design engineers with accurate electrical model extraction based directly upon Maxwell's equations for 3D planar distributed transmission lines, passive circuits, packages, and antennas. Along with the full line of professional software products, Sonnet also offers Sonnet Lite, a free version of the 3D planar EM simulator as a learning tool for students, educators and professionals.

T-Tech
T-Tech introduced its latest and most advanced PCB prototyping system, the Quick Circuit QCJ5 (see video demo). The QCJ5 system produces accurate, economical, and same-day circuit board prototypes directly from CAD package data including Gerber, DXF, HPGL, and Excellon files. Several features found on the QCJ5, such as Z-axis motion control, represent new capabilities for desktop PCB prototyping systems.

TriQuint Semiconductor
TriQuint provided RF Globalnet with an overview of its gallium nitride (GaN) modules — click here to see the video — and announced that it has been awarded a contract by the U.S. Air Force Research Laboratories to develop new GaN modules for unmanned aerial vehicles (see related story). These new modules will include 20 and 50 W devices and will extend the range and capabilities of UAVs over Afghanistan, Iraq, and other regions. TriQuint also announced a new family of RF bulk acoustic wave (BAW) filters that enable mobile devices to act as portable Wi-Fi hotspots and simultaneously connect directly to 4G WiMAX networks (see related story).

Valpey Fisher
Valpey Fisher premiered a couple of new products at this year's show.  The VFVA series of voltage-controlled variable attenuators operate from 0 to 5 V with 1.5 mA typical current drain for maximum attenuation and offer very low distortion, flat attenuation versus frequency, and exceptional VSWR. The design consists of a silicon monolithic quadrature hybrid, two highly matched silicon PIN diodes, and all bias and decoupling structures. The VFHY series of miniature, high-performance, 90 degree hybrids were also introduced. These devices are offered in 1.5 x 2.0 mm surface-mount leadless packages and are available in tape and reel format.

Amplifiers Cultivate Greener Base Stations

Amplifiers Cultivate Greener Base Stations
As network operators look to lower power consumption while raising capacity, amplifier makers are responding with diverse and cutting-edge solutions.

Nancy Friedrich  |  ED Online ID #22726 |  June 2010


"GREEN"basestationswould have been considered a camouflage technique a decade ago. With the "greening" of engineering and the desire to conserve energy to lower costs, however, base-station designers are seeking more integrated, power-efficient, and smaller components. At the same time, mobile data traffic is predicted to double every year for the next few years. Capacity must therefore rise as power consumption decreases. Amplifiers are being spotlighted as key components for lowering power consumption without limiting network capacity. Whether they are low-noise amplifiers (LNAs), power amplifiers (PAs), or driver amplifiers, they are being designed for decreased size and power consumption while enabling greater reliability, capacity, and efficiency.
The need for increased capacity is only expected to grow going forward. According to Fawad Maqbool, President of Amplitech, Inc., "Wireless applications and demands are increasing daily. More and more bandwidth is needed to satisfy the next generation (4G, 5G) of wireless products including handheld PDAs and land-based communication links. This demand is also steadily pushing up the frequencies of operation as well as the speed of the data, which requires the receiving systems to provide lower noise, lower distortion, higher dynamic range, and broader coverage area."
A slew of amplifiers are being introduced to satisfy these needs. For example, RFMD just unveiled high-linearity, digitally controlled (6-b) variable-gain amplifiers (DVGAs). The RFDA DVGA family provides a noise figure below 5 dB over the entire gain range. Each VGA has a gain range of 31.5 dB with 0.5-dB step resolution. The family offers a selection of components with gain to 38 dB, output third-order intercept point (IP3) to +43 dBm, and operation to 4 GHz. For instance, the RDA1005L covers 10 to 4000 MHz while providing 18.5 dB of gain in 0.5- dB steps. It provides +21.0 dBm output power at 1-dB compression and a +35.0-dBm output IP3. Its sibling, the RFDA2026, spans 1800 to 2400 MHz while exhibiting 32.0 dB gain in 0.5-dB steps. It offers +24.0 output power at 1-dB compression and an IP3 of +43.0 dBm. These components are suitable for both receiver and transmitter designs and are offered in both parallel and serial interface versions.
Wireless infrastructure also is among the targets of RFMD's RF5633 2.2-to- 3.8-GHz WiMAX PA integrated circuit (IC). The IC, which features indium-gallium- phosphide (InGaP) heterojunctionbipolar- transistor (HBT) technology, integrates a three-stage PA and power detector. It delivers 2.5 percent error vector magnitude (EVM) with +28 dBm output power from 3.4 to 3.6 GHz and +27 dBm from 3.6 to 3.8 GHz. The PA's bias may be controlled to accommodate a 22-dB gain step to increase the system's dynamic range. The RF5633 offers 34 dB gain.
A new 0.5-W HBT driver amplifier from M/A-COM Technology Solutions targets both cellular and WiMAX base stations. The MAAM-009286 covers 250 to 4000 MHz with an output IP3 of +42 dBm biased at 5 V and 155 mA. At 2140 MHz, it provides 15.5 dB of midband gain. In addition, cellular base stations are among the suitable applications for the firm's 70-to-3000-MHz miniature gain-stage amplifiers.
These gallium-arsenide (GaAs), monolithic-microwaveintegrated- circuit (MMIC) amplifiers employ one-stage, self-biased designs (Fig. 1). They feature 50-O input/output impedance to minimize the number of external components required. M/A-COM's MAAL-009120 offers a typical noise figure of 1.4 dB at 900 MHz and IP3 performance of +35 dBm from 500 to 3000 MHz. Its sibling, the MAAL- 010200, delivers a 1.3-dB noise figure at 900 MHz and +36 dBm IP3 from 500 to 3000 MHz. Both products offer typical gain of 14 dB at 900 MHz. According to Jack Redus, Product Manager at M/A-COM Technology Solutions, "Increased data rates and more complex modulation schemes are driving wireless infrastructure to demand increased linearity from driver amplifiers. These trends are accompanied by a constant demand to reduce overall power consumption and manufacturing complexity. While integrating amplifier, switch, attenuator, and other functions on a single die can simplify manufacturing, it is often at the expense of performance of each functional block. Multifunction integration of dissimilar technologies in a single package will both optimize performance and manufacturing, leading to the eventual replacement of single-function components. Some of our single-function amplifiers available today will be integrated into future multifunction, multichip solutions in surface-mount packages."
WiMAX and 4G LTE applications from 2.3 to 2.8 GHz also are among the target applications of a GaAs InGaP HBT MMIC PA from Hittite Microwave Corp. The HMC755LP4E provides gain to 31 dB with an output IP3 of +43 dBm. It achieves 28-percent power added efficiency (PAE) at +33 dBm saturated output power. Three power control pins can be used to reduce the RF output power or power down the PA to conserve DC power. With orthogonal frequency division multiplex (OFDM) signals, the HMC755LP4E achieves output power of +25 dBm (64 QAM, 54 Mb/s) with EVM of 2.5 percent.
Although Freescale Semiconductor is well known for its LDMOS expertise, the firm recently unveiled MMICs that are optimized for transmitter and receiver functions in base stations, femtocells, and cellular repeaters. The devices address both low-noise amplifiers and transmit power amplifiers. The MML09211H, for example, is an enhancement-mode pHEMT MMIC LNA that is well suited for applications ranging from WCDMA base stations in the 865-to-960-MHz band to the high-data-rate networks currently being implemented in the 728-to-768-MHz band. The device offers a low noise figure of 0.6 dB from 400 to 1400 MHz. At 900 MHz, it delivers 20 dB small-signal gain with +21 dBm output power at 1-dB compression. The amplifier exhibits isolation of 35 dB with output IP3 of +32 dBm. Its sibling, the MMA20312B, is a two-stage InGaP HBT power amplifier designed for use in wireless base stations as well as repeaters and femtocells. The amplifier covers 1800 to 2200 MHz. At 2140 MHz, it delivers +31 dBm output power at 1-dB compression with a smallsignal gain of 26 dB.
The two other new broadband MMIC amplifiers are equally suited for use as driver amplifiers in the transmit chain or as second-stage low-noise amplifiers in the receive chain. The MMG15241H pHEMT device covers 500 to 2800 MHz with a noise figure of 1.6 dB at 2140 MHz. It boasts +24 dBm output power at 1-dB compression with an IP3 of +39 dBm and small-signal gain of 15 dB. In contrast, the MMG20271H LNA covers 1500 to 2400 MHz. It provides a noise figure of 1.8 dB at 2140 MHz, +27 dBm output power at 1-dB compression, IP3 of +42 dBm, and small-signal gain of 15 dB.
Two new GaAs MMIC LNAs from Skyworks Solutions, Inc. promise to satisfy the demanding noise and linearity requirements for multiple cellular-infrastructure receiver applications including GSM, CDMA, WCDMA, and LTE base stations and repeaters (Fig. 2). The SKY67100-396LF covers 1.7 to 2.0 GHz while the SKY67101-396LF spans 0.7 to 1.0 GHz. These enhancement-mode pseudomorphic high-electron mobility transistor (pHEMT) LNAs are designed for a low noise figure down to 0.49 dB while providing an output third-order intercept point of +34 dBm. An internal active bias circuitry vows to provide stable performance over temperature.
At 1.95 GHz, the SKY67100-396LF offers a noise figure of 0.61 dB. It exhibits input return loss that is better than 20 dB with a +34-dBm high output third-order intercept point. In contrast, the SKY67101-396LF delivers a noise figure of 0.49 dB at 0.9 GHz. It exhibits input and output return loss above 20 dB at 0.9 GHz. The LNA delivers a high third-order intercept point of +34.1 dBm at 0.9 GHz.
By covering 1500 to 2300 MHz and 2300 to 4000 MHz, two devices from Avago Technologies complete the firm's next-generation LNA series covering all cellular bands for GSM, CDMA, UMTS, WiMAX, and LTE. The LNAs target base-station RF front-end design. At 1900 MHz with a typical operating condition of 5 V/51 mA, the firm's proprietary GaAs enhancement-mode pHEMT process technology provides a noise figure of 0.48 dB and an OIP3 of +35 dBm. It delivers +21 dBm output power at 1-dB compression with 17.8 dB gain. At 2500 MHz with a typical operating condition of 5 V/56 mA, however, the technology offers a noise figure of 0.59 dB with OIP3 of +35 dBm. It boasts 17.5 dB gain with +22 dBm output power at 1-dB compression. Thanks to built-in active bias circuitry, Avago's LNA operating current is adjustable. Designers can therefore make tradeoffs between operating current and output linearity as measured by OIP3 while maintaining an optimum noise figure.
The HBT amplifier line from Aeroflex/Metelics (s) is well suited for cellular, PCS, 2.5/3G, MMDS, WLL, and other types of wireless-infrastructure applications. The firm offers both low and medium power amplifiers as well as Darlington gain blocks. The HBT low and medium PAs are specifically designed for highefficiency, Class A driver devices. They provide output power from 0.25 to 4 W with gain ranging from 100 MHz to 2650 GHz. The MMA717-3030, for example, is designed to provide moderate power levels from 100 MHz to 2.5 GHz. Typically, it provides +31 dBm output power with a high output IP3 of +50 dBm. It delivers a typical dynamic range of 97 dB.
For their part, the Aeroflex/Metelics InGaP HBT MMIC amplifiers are specially designed as broadband Darlington gain blocks that combine different levels of small signal gain, noise, and bandwidth. They offer a flat gain response from 100 MHz to 12 GHz. At 2 GHz, for example, the MMA708 spans DC to 4000 MHz while offering 13 dB of gain. It features +20 dBm output power at -1 dB with a typical IP3 of +38 dBm. The amplifier provides a noise figure of 6 dB with input and output VSWR of 1.40:1 and 2.00:1, respectively.
http://www.mwrf.com/Articles/Index.cfm?Ad=1&ArticleID=22726
By Edgar Alberto Servita 18.856.338
CAF

METALLIC SOURCE/DRAIN ARCHITECTURE FOR ADVANCED MOS TECHNOLOGY

METAMOS

Entidades participantes: CNRS (Francia), Universidad de Salamanca (España), Université Catholique de Louvain (Bélgica), I.T.E. (Polonia), ST Microelectronics, Philips Semiconductors

Resumen: Among the main difficulties to overcome toward the 10 nm gate length MOSFET, many challenges are associated to the source/drain (S/D) regions. The tight constraints of dopant activation to achieve very highly doped junctions, extremely steep lateral profiling, low contact specific resistance have motivated a renewed interest in MOSFETs architectures that integrate metallic Schottky S/D. Based on that background, the METAMOS project proposes the design, optimisation, fabrication and characterization of metallic Schottky-Barrier-like MOSFETs to solve critical problems associated to the source/drain architecture and more specifically due to the specific contact resistance at the metal (or silicide) to silicon interface. The first major objective is to develop and fully characterize advanced very low Schottky barriers (<0.1 eV) primarily based on (but not limited to) silicides of platinum and iridium for p-type contacts and rare earth silicides (erbium, ytterbium) for n-type contacts. The second objective is to demonstrate the complete integration of metallic source/drain (S/D) in a complementary MOS technology at academic level as a test bed to operate the appropriate selection of contact materials and process flow for industrial exploitation. The third objective concentrates on the implementation of metallic S/D into bulk and SOI CMOS process cores to demonstrate the transfer from a laboratory concept to an industrially viable solution. Finally, the fourth general objective is to get a definitive answer on the ability of metallic S/D MOSFETs and of non-overlap architectures to outmatch the conventional one, based on device demonstration, wideband measurements, physical modelling and comparison with CMOS state-of-the-art and ITRS requirements. To reach this goal, the project is organized in 4 technical workpackages covering:

  • material engineering,
  • process integration,
  • device simulation and modelling and
  • material and device characterization
MOSFET  escalado
Entidades participantes: Universidad de Salamanca (España)

Resumen:El objetivo del presente proyecto es el perfeccionamiento y utilización de simuladores Monte Carlo de dispositivos para afrontar el estudio de transistores MOSFET avanzados de Silicio de máximo interés hoy en día para la industria semiconductora, y en particular algunos de los dispositivos identificados por el ITRS como las soluciones más prometedoras a los problemas observados en las estructuras MOSFET convencionales.
By Edgar Alberto Servita 18.856.338
CAF

The European Microwave Integrated Circuits Conference 2009 (Formerly GAAS)

The European Microwave Integrated Circuits Conference 2009 (Formerly GAAS)


Rome, 28-29 September 2009

The 4th European Microwave Integrated Circuits (EuMIC) Conference will be held from 28 to 29 September 2009 in Rome, Italy, as part of the European Microwave Week. This conference has evolved from the highly successful GAAS Symposium and is now organised jointly by GAAS Association and EuMA. This microwave integrated circuits conference will continue to help make European Microwave Week the largest event in Europe related to RF microelectronics.
Microwave Monolithic Integrated circuits, MMIC and RFIC, is the foundation of today's telecommunication and sensor systems. While GaAs and silicon based IC-technologies are used in today's microwave link, radar, and remote sensing applications, emerging technologies such as wide band gap (SiC, GaN etc) and InP/antimonide based devices are expected to become commercially available within a few years, with an expected large impact on system performance. The downscaling of silicon technologies such as CMOS and SiGe-HBT according to Moore's law, has now resulted in device performance close to the III-V technologies with cut-off frequencies exceeding 300 GHz. As an expected result, highly integrated microwave and millimetre-wave systems will likely be available also for broader consumer mass market applications due to the reduced cost and increased functionality. As a result of the downscaling, there are however many challenges to conquer such as the resulting low breakdown voltage, which complicates the generation of microwave and millimetre-wave power with decent efficiency, higher 1/f noise in devices leading to higher phase noise in local oscillators, substrate noise/coupling etc. To provide short time-to-product, first pass success in the design and short foundry turn-around time becomes very important. In addition, as the complexity of the circuits is increased, accurate modelling of active and passive components as well as the efficiency of CAD/CAE tools becomes increasingly important. As a result, new systems working in the microwave and millimetre-wave range will facilitate totally new services in the area of safety and security, high bit-rate wireless last-mile access, and multigigabit/s low-cost wireless links for home, entertainment, medical, and secure communication. In such a swiftly changing environment, it is essential to be well informed about current stateof-the-art technology, especially the latest developments.
EuMIC is the leading conference for MMICs/RFICs and their applications in Europe, and therefore the ideal event to keep up to date with the latest achievements in the field. The aim of the conference is to promote the discussion of recent developments and trends, and encourage the exchange of scientific and technical information on physical fundamentals, material technology, process development and technology, physics based and empiricalbehavioural modelling of microwave and optoelectronic active devices, design of monolithic ICs based on GaAs, InP, SiGe, GaN, SiC, RF CMOS and other semiconductor materials. Special emphasis will be given to applications covering the field of telecommunications (RF, microwave and optical), automotive, sensors, MEMS, defense and space, as well as emerging technologies such as wide band-gap semiconductors.

Conference Topics

Modelling and Circuit Simulation

G1 Physics Based Device Modelling and Simulation
G2 CAD Oriented Device Modelling
G3 Noise Modelling
G4 Linear and Non-Linear CAD Techniques for Devices, Circuits & Systems (including Thermal and Behavioural Modelling) (common topic with EuMC)
G5 Mixed-Signal Modelling

Technologies and Devices

G6 Nano-Technologies and Quantum Devices
G7 III-V Compound Semiconductors Devices and IC-Technologies
G8 Si-Based Devices and IC-Technologies
G9 Wide-Bandgap Semiconductors Devices and Technologies
G10 RF-MEMS and MOEMS (common topic with EuMC)
G11 Reliability, Yield and Statistical Analysis

Circuit Design and Applications

G12 Microwave and Millimetre-Wave Monolithic ICs for Industrial Applications common topic with EuMC)
G13 Millimetre-Wave and Sub-Millimetre Wave Devices and ICs
G14 Power Amplifiers and Linearisers (common topic with EuMC)
G15 Si-Based and Mixed Signal ICs and System On Chip (common topic with EuWiT)
G16 Interconnects, Packaging and Multi-Chip Modules (common topic with EuMC)
G17 Tuneable and Reconfigurable RF Circuits and Systems (common topic with EuMC)
G18 Circuits and Devices for Homeland Security and Space

Conference Highlights

Over 100 papers will be presented with contributions from Europe, Asia and the USA and a growing number of emerging countries. Papers and posters will be made available on CD-ROM in the Conference Proceedings. Lively industrial panel sessions will also be organised. Keynote speakers from industry and the scientific community will present invited papers on topics of current and emerging importance in the microwave and millimetre-wave field (processes, devices, circuit theory, industrial applications). Tailored Short Courses and Workshops will complement the programme.

EuMIC 2009 Prize

The Technical Programme Committee of EuMIC and the EuMW Steering Committee will award the EuMIC Prize of € 3,000 to the author(s) of the best contributed paper to the EuMIC 2009.

EuMIC Young Engineers Prize

The EuMIC Technical Programme Committee and the EuMW Steering Committee will award the Young Engineer Prize of € 2,000 to a young engineer or researcher who has presented an outstanding paper at the European Microwave Integrated Circuits Conference. To be eligible candidates must (1) be aged 30 or younger at the date of the award, (2) be the first author of the paper, (3) be the presenter either of an oral or poster session. Applicants must state the purpose to which the prize will be put.The successful applicant may use part of the prize to fund attendance at the following year's European Microwave Integrated Circuits Conference.

GAAS PhD Student Fellowship

The GAAS Association sponsors three student fellowships of € 2,000 each, to be given to young full-time PhD students having an accepted paper at EuMIC 2009. The purpose is to recognize and provide financial assistance to international PhD students who show promise and interest in pursuing a graduate degree in microwave electronics. Applications should be submitted before 7 June 2009 to the GAAS Association and to the EuMIC Chairman. For further details see the GAAS Association web-site www.gaas-symposium.org.

Reduced Fees and Special Grants

Reduced fees are implemented for students as well as senior persons aged 65 years or more. The European Microwave Association will also provide up to four student grants consisting of € 500 plus the reduced registration fee for EuMIC. Applications should be sent to the EuMIC Chairman by 7 June 2009.
The European Microwave Association will also provide a number of grants for delegates coming from NIS countries and Russia. The value of the grants is € 500 plus the reduced registration fee for the EuMIC. Applications should be sent to the EuMIC Chairman by 7 June 2009.

By Edgar Alberto Servita 18.856.338
CAF

Analog Devices Delivers Radio Frequency

Analog Devices Delivers Radio Frequency ICs with Breakthrough Integration for Broadband Communications Equipment

NORWOOD, Mass., Apr 06, 2010 (BUSINESS WIRE) --

Analog Devices, Inc. (NYSE: ADI | PowerRating), a global leader in high performance semiconductors for signal processing applications and leading supplier of RF ICs (radio frequency integrated circuits), announced today two new RF ICs for broadband communications systems that reduce component count by more than 75 percent, without compromising performance. The ADRF6655 active mixer or ADRF6510 dual programmable filter and VGA (variable gain amplifier) integrate multiple functions and discrete devices into a single monolithic chip, reducing component count by a factor of four when compared to traditional discrete RF designs. ADI is the only RF IC supplier to offer devices with this level of integration and with the capability to address multiple broadband communications markets, such as point-to-point microwave radios, wireless base stations, cable infrastructure, defense wideband and software-defined radios, cellular repeaters and relays, and communications test equipment.

"Designers of next-generation radio equipment constantly aim to reduce component count and system cost, without sacrificing performance. ADI's new ADRF6655 integrated broadband mixer and ADRF6510 dual programmable filter and VGA establish new benchmarks in integration, based on our performance-leading and field-proven PLL/VCO, mixer and amplifier technologies," said Peter Real, vice president, Linear and RF products, Analog Devices. "Both devices solve complex integration challenges for broadband RF system designers who have previously been constrained by the use of multiple discrete circuits and who can now realize new levels of performance and cost efficiency with these highly integrated and highly flexible monolithic RFICs."

About the ADRF6655 Active Mixer

Operating within the 100 to 2500 MHz frequency range, the ADRF6655 device is a highly-flexible, single-chip, broadband, active mixer with a fully integrated fractional-N phase locked loop (PLL) synthesizer, voltage controlled oscillator (VCO) and associated low dropout (LDO) regulator circuits. The ADRF6655 active mixer is a highly flexible device that provides exceptional performance for both up- and down-conversion applications. The PLL and VCO provide a fully integrated LO (local oscillator) circuit that can also be brought off-chip for external use. The ADRF6655 active mixer operates on a single +5 V supply and features input linearity IP3 (+29 dBm); input compression P1dB (+14 dBm); conversion gain (6 dB), noise figure (12 dB) as well as LO phase noise of -111 dBc at 100 kHz offset. Full specifications and a complete data sheet can be accessed at www.analog.com/pr/adrf6655.

About the ADRF6510 Dual Programmable Filter and VGA

The ADRF6510 is dual channel fully-differential baseband signal processing solution that integrates a matched pair of fully differential low-noise and low-distortion programmable filters and variable gain amplifiers onto a single chip. The ADRF6510 is the first monolithic IC that replaces complex, bulky discrete fixed function filters, saving considerable board area. The matched filter networks provide exceptional flexibility as the corner frequency is fully adjustable in 1 MHz steps, thereby enabling wideband and narrow band support within a single radio design, a key benefit since the available spectrum and bandwidth varies across markets and regions worldwide.

The ADRF6510 VGA provides an adaptable multi-stage adjustable gain control range of 50 dB, a pre-amp prior to the filters provide a 6 dB step; while the variable gain amplifiers that follow the filter networks provide gain range of -5 dB to +45 dB. This allows the user to select and optimize the gain range for high dynamic range radios and eases the drive requirements into the analog to digital converter.

The ADRF6510 is a unique industry first single chip solution that provides low distortion >60dBc IMD3 ideally suited for high order QAM modulation, quadrature (I-Q) communications systems supporting high bandwidth signals up to 56 MHz. A complete data sheet is available at www.analog.com/pr/adrf6510.

Pricing, Availability and Complementary Products

The ADRF6655 is available now in a 6 mm x 6 mm 40-pin LFCSP package and is priced at $9.98 per unit in 1,000-unit quantities. The ADRF6655 is complemented by ADI's RF/IF amplifiers such as the ADL5601, ADL5602 and ADL5320. The ADRF6510 is available now in a 5 mm x 5 mm 32-pin LFCSP package and is priced at $8.99 per unit in 1,000-unit quantities. The ADRF6510 is well-suited for use with ADI's ADL5380, ADL5382 and ADL5387 wideband demodulators.

ADI's RF IC Portfolio Covers Entire RF Signal Chain

Using a unique combination of design skills, system understanding and process technologies, Analog Devices offers the broadest portfolio of RF ICs covering the entire RF signal chain from industry-leading high-performance RF function blocks to highly integrated WiMAX and short-range, single chip transceiver solutions. The RF function blocks include PLL, integrated PLL/VCO and DDS synthesizers; TruPwr(TM) RMS power detectors and logarithmic amplifiers; variable gain amplifiers; power amplifiers, low noise amplifiers and other amplifiers; RF mixers and direct conversion modulator and demodulator products. These products are supported by a wide range of free design tools to ease the development of RF systems. For more information, visit http://www.analog.com/rf.

About Analog Devices, Inc.

Innovation, performance, and excellence are the cultural pillars on which Analog Devices has built one of the longest standing, highest growth companies within the technology sector. Acknowledged industry-wide as the world leader in data conversion and signal conditioning technology, Analog Devices serves over 60,000 customers, representing virtually all types of electronic equipment. Celebrating over 40 years as a leading global manufacturer of high-performance integrated circuits used in analog and digital signal processing applications, Analog Devices is headquartered in Norwood, Massachusetts, with design and manufacturing facilities throughout the world. Analog Devices' common stock is listed on the New York Stock Exchange under the ticker "ADI" and is included in the S&P 500 Index. http://www.analog.com

http://www.tradingmarkets.com/news/press-release/adi_analog-devices-delivers-radio-frequency-ics-with-breakthrough-integration-for-broadband-communicatio-892952.html

By Edgar Alberto Servita 18.856.338

CAF